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MOSFETs

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

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Part Number Status Recommended
Replacement
Package Configuration Polarity Vds Vgs Id Pd Rds (on) mΩ max Qg (nC)
25°C 25°C 10V 4.5V 2.5V 1.8V
V V A W mΩ mΩ mΩ mΩ
AOB66613L New - TO263 Single N 60 20 120 260 2.5 - - - 78
AOB66916L New - TO263 Single N 100 20 120 277 3.6 - - - 78
AOB66920L New - TO263 Single N 100 20 80 100 8 10.5 - - 16.7
AOD21357 New - TO252 Single P -30 25 -70 78 8 13 - - 35
AOD32334C New - TO252 Single N 30 20 12 18 20 26 - - 55
AOD66616 New - TO252 Single N 60 20 70 113 3.7 - - - 42.5
AOD66920 New - TO252 Single N 100 20 70 89 8.2 10.7 - - 16.7
AOE66410 New - DFN5x6A-8L Single N 40 20 100 147 1 1.5 - - 50
AOI21357 New - TO251A Single P -30 25 -70 78 8 13 - - 35
AOK66613 New - TO247 Single N 60 20 120 312 2.5 - - - 78
AONR21117 New - DFN3x3A-8L Single P -20 8 -34 43 - 4.8 7.2 - 63
AONS32100 New - DFN5x6-8L EP1 Single N 25 20 400 250 0.73 1.08 - - 115
AONS32310 New - DFN5x6-8L EP1 Single N 30 20 390 250 1.05 1.43 - - 110
AONS36314 New - DFN5x6-8L EP1 Single N 30 12 85 42 2.9 3.5 - - 11.5
AONS36316 New - DFN5x6-8L EP1 Single N 30 12 32 26 4.1 4.9 - - 13.5
AONS66917 New - DFN5x6-8L EP1 Single N 100 20 100 - 3.5 5 - - 35
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