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AONV210A60
高压MOSFET (500V - 1000V)
Status: Full Production
600V, aMOS5™ N-Channel Power Transistor
Parametrics
Status | Full Production |
Package | DFN8x8-4L |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 20 |
ID @ 25°C (A) | 20 |
PD @ 25°C (W) | 208 |
RDS(ON) max (mΩ) at VGS= 10V | 210 |
Qg (10V)(nC) | 34 |
Ciss (pF) | 1935 |
Coss (pF) | 55 |
Crss (pF) | 1.25 |
Qgd (nC) | 8 |
tD(on) (ns) | 80 |
tD(off) (ns) | 80 |
Trr (ns) | 341 |
Qrr (nC) | 6800 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Parametrics
Status | Full Production |
Package | DFN8x8-4L |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 20 |
ID @ 25°C (A) | 20 |
PD @ 25°C (W) | 208 |
RDS(ON) max (mΩ) at VGS= 10V | 210 |
Qg (10V)(nC) | 34 |
Ciss (pF) | 1935 |
Coss (pF) | 55 |
Crss (pF) | 1.25 |
Qgd (nC) | 8 |
tD(on) (ns) | 80 |
tD(off) (ns) | 80 |
Trr (ns) | 341 |
Qrr (nC) | 6800 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AONV210A60 Datasheet | Datasheets | 2024-04-17 | |
| AONV210A60 Marking | Markings | 2021-01-28 | |
| DFN8x8_4L_EP1_S | Package | 2022-09-06 | |
| AONV210A60 Reliability Report | Reliability Reports | 2021-05-20 | |
| DFN8x8_4L_EP1_S Tape & Reel | Tape & Reel | 2024-03-15 |
Related Resources
| Title | Type | Date | File |
|---|---|---|---|
| HV MOSFET Product Highlights | Product Highlights | 2024-02-02 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| DFN8x8_4L_EP1_S | 8.0x8.0 | Tape and Reel |