AOV11S60
高压MOSFET (500V - 1000V)
Status: Not for New Designs
600V 8A αMOS™ Power Transistor
Parametrics
Status | Not for New Designs |
Package | DFN8x8-4L |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 30 |
ID @ 25°C (A) | 8 |
PD @ 25°C (W) | 156 |
RDS(ON) max (mΩ) at VGS= 10V | 500 |
Qg (10V)(nC) | 11 |
VGS(th) max (V) | 4.10 |
Ciss (pF) | 545 |
Coss (pF) | 37.30 |
Crss (pF) | 1.42 |
Qgd (nC) | 3.80 |
tD(on) (ns) | 20 |
tD(off) (ns) | 59 |
Trr (ns) | 250 |
Qrr (nC) | 3300 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Parametrics
Status | Not for New Designs |
Package | DFN8x8-4L |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 30 |
ID @ 25°C (A) | 8 |
PD @ 25°C (W) | 156 |
RDS(ON) max (mΩ) at VGS= 10V | 500 |
Qg (10V)(nC) | 11 |
VGS(th) max (V) | 4.10 |
Ciss (pF) | 545 |
Coss (pF) | 37.30 |
Crss (pF) | 1.42 |
Qgd (nC) | 3.80 |
tD(on) (ns) | 20 |
tD(off) (ns) | 59 |
Trr (ns) | 250 |
Qrr (nC) | 3300 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOV11S60 Datasheet | Datasheets | 2019-02-12 | |
| AOV11S60 Marking | Markings | 2019-02-12 | |
| DFN8x8_4L_EP1_S | Package | 2022-09-06 | |
| DFN8x8_4L_EP1_S Tape & Reel | Tape & Reel | 2024-03-15 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| DFN8x8_4L_EP1_S | 8.0x8.0 | Tape and Reel |