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AON5820

低压共漏电池 MOSFET

Status: Full Production

20V Common-Drain Dual N-Channel MOSFET

Parametrics
Status
Full Production
Package
DFN2x5-6L
Configuration
Common Drain
Polarity
N
VGS (±V)
12
PD @ 25°C (W)
1.70
Qg (4.5V)(nC)
12.50
VGS(th) max (V)
1
Ciss (pF)
1255
Coss (pF)
200
Crss (pF)
168
Qgd (nC)
6.50
tD(on) (ns)
1.10
tD(off) (ns)
7
Trr (ns)
11
Qrr (nC)
15
Qualification
Industrial
ESD Diode
Yes
Tj max (°C)
150
Parametrics
Status
Full Production
Package
DFN2x5-6L
Configuration
Common Drain
Polarity
N
VGS (±V)
12
PD @ 25°C (W)
1.70
Qg (4.5V)(nC)
12.50
VGS(th) max (V)
1
Ciss (pF)
1255
Coss (pF)
200
Crss (pF)
168
Qgd (nC)
6.50
tD(on) (ns)
1.10
tD(off) (ns)
7
Trr (ns)
11
Qrr (nC)
15
Qualification
Industrial
ESD Diode
Yes
Tj max (°C)
150
Documentation
TitleTypeDateFile
AON5820 Datasheet
Datasheets2019-02-12PDF
AON5820 Marking
Markings2019-02-12PDF
AON5820 Reliability Report
Reliability Reports2021-05-20PDF
DFN2x5_6L_EP1_P
Package2022-11-16PDF
DFN2x5_6L_EP1_P Tape & Reel
Tape & Reel2024-03-14PDF
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
DFN2x5_6L_EP1_P 2.0x5.0x0.75PDFTape and Reel