AOSMD
产品
  
应用
  
设计支持
  
关于 AOS
  
CONTACT US

AON6810

低压共漏电池 MOSFET

Status: Obsolete

AlphaMOS 30V Common Drain N-Channel

Parametrics
Status
Obsolete
Package
DFN5x6-8L
Configuration
Common Drain
Polarity
N
VGS (±V)
20
PD @ 25°C (W)
31
Qg (4.5V)(nC)
11
VGS(th) max (V)
2.20
Ciss (pF)
1720
Coss (pF)
746
Crss (pF)
61
Qgd (nC)
3.20
tD(on) (ns)
5.80
tD(off) (ns)
57.50
Trr (ns)
20
Qrr (nC)
30
Qualification
Industrial
ESD Diode
Yes
Tj max (°C)
150
Parametrics
Status
Obsolete
Package
DFN5x6-8L
Configuration
Common Drain
Polarity
N
VGS (±V)
20
PD @ 25°C (W)
31
Qg (4.5V)(nC)
11
VGS(th) max (V)
2.20
Ciss (pF)
1720
Coss (pF)
746
Crss (pF)
61
Qgd (nC)
3.20
tD(on) (ns)
5.80
tD(off) (ns)
57.50
Trr (ns)
20
Qrr (nC)
30
Qualification
Industrial
ESD Diode
Yes
Tj max (°C)
150
Documentation
TitleTypeDateFile
AON6810 Datasheet
Datasheets2016-02-01PDF
AON6810 Marking
Markings2019-02-12PDF
AON6810 Reliability Report
Reliability Reports2021-05-20PDF
DFN5x6B_8L_EP1_P
Package2022-09-06PDF
DFN5x6B_8L_EP1_P Tape & Reel
Tape & Reel2024-03-15PDF
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
DFN5x6B_8L_EP1_P 5.0x6.0x0.95PDFTape and Reel