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AOT20B65M1
AlphaIGBT™
AlphaIGBT 提供业界领先的快速关断和低 VCE(SAT) 性能，从而实现更大的安全设计空间。可控的接通di/dt可有效降低EMI设计，适用于大多数家用电器、工业和汽车应用。
- 更低的导通损耗
- 更低的开关损耗
- 更低的EMI性能
- 更高的坚固性
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOT20B65M1 Datasheet | Datasheets | 2016-06-20 | |
| AOT20B65M1 Marking | Markings | 2015-06-03 | |
| AOT20B65M1 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO-220 | Package | 2020-08-11 | |
| TO220 Tape & Reel | Tape & Reel | 2020-08-11 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOT20B65M1 Datasheet | Datasheets | 2016-06-20 | |
| AOT20B65M1 Marking | Markings | 2015-06-03 | |
| AOT20B65M1 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO-220 | Package | 2020-08-11 | |
| TO220 Tape & Reel | Tape & Reel | 2020-08-11 |
Parametrics
Status | Full Production |
Package | TO220 |
Configuration | IGBT with Anti-Parallel Diode |
Qg (nC) | 46.00 |
Qrr (nC) | 800.00 |
VF (V) | 1.66 |
VCE max (V) | 650.00 |
VCE(SAT) typ (V) | 1.70 |
Ic max @ 25C (A) | 40.00 |
Ic max @ 100C (A) | 20.00 |
EON (mJ) | 0.47 |
EOFF (mJ) | 0.27 |
IRM (A) | 5.20 |