AOB10N60
高压MOSFET (500V - 1000V)
600V,10A N-Channel MOSFET
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOB10N60 Datasheet | Datasheets | 2019-02-12 | |
| AOB10N60 Marking | Markings | 2019-02-12 | |
| AOB10N60 Reliability Report | Reliability Reports | 2019-02-12 | |
| TO-263 | Package | 2020-08-11 | |
| TO263 Tape & Reel | Tape & Reel | 2020-08-11 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOB10N60 Datasheet | Datasheets | 2019-02-12 | |
| AOB10N60 Marking | Markings | 2019-02-12 | |
| AOB10N60 Reliability Report | Reliability Reports | 2019-02-12 | |
| TO-263 | Package | 2020-08-11 | |
| TO263 Tape & Reel | Tape & Reel | 2020-08-11 |
Parametrics
Status | Not for New Designs |
Package | TO263 |
Configuration | Single |
Polarity | N |
VDS (V) | 600.00 |
VGS (±V) | 30.00 |
ID @ 25°C (A) | 10.00 |
PD @ 25°C (W) | 250.00 |
RDS(ON) max (mΩ) at VGS= 10V | 750.00 |
Qg (4.5V)(nC) | 31.00 |
VGS(th) max (V) | 4.50 |
Ciss (pF) | 1320.00 |
Coss (pF) | 130.00 |
Crss (pF) | 9.30 |
Qgd (nC) | 14.40 |
tD(on) (ns) | 28.00 |
tD(off) (ns) | 76.00 |
Trr (ns) | 290.00 |
Qrr (nC) | 3900.00 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150.00 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| TO263 | 10.03x15.24x4.45 | Tape and Reel |