AOB11S65
高压MOSFET (500V - 1000V)
650V 11A αMOS™ Power Transistor
- Datasheets
- Markings
- Package
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOB11S65 Datasheet | Datasheets | 2019-02-12 | |
| AOB11S65 Marking | Markings | 2019-02-12 | |
| TO263 | Package | 2020-08-11 | |
| TO263 Tape & Reel | Tape & Reel | 2023-11-13 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOB11S65 Datasheet | Datasheets | 2019-02-12 | |
| AOB11S65 Marking | Markings | 2019-02-12 | |
| TO263 | Package | 2020-08-11 | |
| TO263 Tape & Reel | Tape & Reel | 2023-11-13 |
Parametrics
Status | Not for New Designs |
Package | TO263 |
Configuration | Single |
Polarity | N |
VDS (V) | 650 |
VGS (±V) | 30 |
ID @ 25°C (A) | 11 |
PD @ 25°C (W) | 198 |
RDS(ON) max (mΩ) at VGS= 10V | 399 |
Qg (10V)(nC) | 13.20 |
VGS(th) max (V) | 4 |
Ciss (pF) | 646 |
Coss (pF) | 42 |
Crss (pF) | 1.10 |
Qgd (nC) | 4.30 |
tD(on) (ns) | 25 |
tD(off) (ns) | 77 |
Trr (ns) | 278 |
Qrr (nC) | 4200 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| TO263 | 10.03x15.24x4.45 | Tape and Reel |