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AOD1R4A70
高压MOSFET (500V - 1000V)
700V, aMOS™ N-Channel Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOD1R4A70 Datasheet | Datasheets | 2020-07-31 | |
| AOD1R4A70 Marking | Markings | 2018-08-01 | |
| AOD1R4A70 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO252 | Package | 2023-10-06 | |
| TO252 Tape & Reel | Tape & Reel | 2020-08-05 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOD1R4A70 Datasheet | Datasheets | 2020-07-31 | |
| AOD1R4A70 Marking | Markings | 2018-08-01 | |
| AOD1R4A70 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO252 | Package | 2023-10-06 | |
| TO252 Tape & Reel | Tape & Reel | 2020-08-05 |
Parametrics
Status | Full Production |
Package | TO252 |
Configuration | Single |
Polarity | N |
VDS (V) | 700 |
VGS (±V) | 20 |
ID @ 25°C (A) | 3.80 |
PD @ 25°C (W) | 48 |
RDS(ON) max (mΩ) at VGS= 10V | 1400 |
Qg (10V)(nC) | 8 |
VGS(th) max (V) | 4.10 |
Ciss (pF) | 354 |
Coss (pF) | 12 |
Crss (pF) | 1.30 |
Qgd (nC) | 2 |
tD(on) (ns) | 15 |
tD(off) (ns) | 32 |
Trr (ns) | 176 |
Qrr (nC) | 1400 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| TO252 | 6.6x10.41x2.29 | Tape and Reel |