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AOD1R4A70
高压MOSFET (500V - 1000V)
700V, aMOS™ N-Channel Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOD1R4A70 Datasheet | Datasheets | 2020-07-31 | |
| AOD1R4A70 Marking | Markings | 2018-08-01 | |
| AOD1R4A70 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO-252 | Package | 2021-03-03 | |
| TO252 Tape & Reel | Tape & Reel | 2020-08-05 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOD1R4A70 Datasheet | Datasheets | 2020-07-31 | |
| AOD1R4A70 Marking | Markings | 2018-08-01 | |
| AOD1R4A70 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO-252 | Package | 2021-03-03 | |
| TO252 Tape & Reel | Tape & Reel | 2020-08-05 |
Parametrics
Status | Full Production |
Package | TO252 |
Configuration | Single |
Polarity | N |
VDS (V) | 700.00 |
VGS (±V) | 20.00 |
ID @ 25°C (A) | 3.80 |
PD @ 25°C (W) | 48.00 |
RDS(ON) max (mΩ) at VGS= 10V | 1400.00 |
Qg (4.5V)(nC) | 8.00 |
VGS(th) max (V) | 4.10 |
Ciss (pF) | 354.00 |
Coss (pF) | 12.00 |
Crss (pF) | 1.30 |
Qgd (nC) | 2.00 |
tD(on) (ns) | 15.00 |
tD(off) (ns) | 32.00 |
Trr (ns) | 176.00 |
Qrr (nC) | 1400.00 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150.00 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| TO252 | 6.6x10.41x2.29 | Tape and Reel |