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AOI1R4A70

AOI1R4A70

高压MOSFET (500V - 1000V)

700V, aMOS™ N-Channel Power Transistor

  • Datasheets
  • Markings
  • Package
  • Reliability Reports
  • Tape & Reel
Download Selected
Documentation
TitleTypeDateFile
AOI1R4A70 DatasheetDatasheets2020-07-31PDF
AOI1R4A70 MarkingMarkings2018-08-01PDF
AOI1R4A70 Reliability ReportReliability Reports2021-05-20PDF
TO-251APackage2020-07-29PDF
TO251A Tape & ReelTape & Reel2020-07-29PDF
Documentation
TitleTypeDateFile
AOI1R4A70 DatasheetDatasheets2020-07-31PDF
AOI1R4A70 MarkingMarkings2018-08-01PDF
AOI1R4A70 Reliability ReportReliability Reports2021-05-20PDF
TO-251APackage2020-07-29PDF
TO251A Tape & ReelTape & Reel2020-07-29PDF
Parametrics
Status
Not for New Designs
Package
TO251A
Configuration
Single
Polarity
N
VDS (V)
700.00
VGS (±V)
20.00
ID @ 25°C (A)
3.80
PD @ 25°C (W)
48.00

RDS(ON) max (mΩ) at VGS= 10V

1400.00
Qg (4.5V)(nC)
8.00
VGS(th) max (V)
4.10
Ciss (pF)
354.00
Coss (pF)
12.00
Crss (pF)
1.30
Qgd (nC)
2.00
tD(on) (ns)
15.00
tD(off) (ns)
32.00
Trr (ns)
176.00
Qrr (nC)
1400.00
Qualification
Industrial
ESD Diode
No
Tj max (°C)
150.00
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
TO251A 6.6x11.42x2.29PDFTube