AOI2N60A
高压MOSFET (500V - 1000V)
600V,2A N-Channel MOSFET
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOI2N60A Datasheet | Datasheets | 2019-02-12 | |
| AOI2N60A Marking | Markings | 2019-02-12 | |
| AOI2N60A Reliability Report | Reliability Reports | 2021-05-20 | |
| TO251A | Package | 2020-07-29 | |
| TO251A Tape & Reel | Tape & Reel | 2023-07-17 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOI2N60A Datasheet | Datasheets | 2019-02-12 | |
| AOI2N60A Marking | Markings | 2019-02-12 | |
| AOI2N60A Reliability Report | Reliability Reports | 2021-05-20 | |
| TO251A | Package | 2020-07-29 | |
| TO251A Tape & Reel | Tape & Reel | 2023-07-17 |
Parametrics
Status | Full Production |
Package | TO251A |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 30 |
ID @ 25°C (A) | 2 |
PD @ 25°C (W) | 57 |
RDS(ON) max (mΩ) at VGS= 10V | 4700 |
Qg (10V)(nC) | 6.50 |
VGS(th) max (V) | 4.50 |
Ciss (pF) | 295 |
Coss (pF) | 30 |
Crss (pF) | 2.30 |
Qgd (nC) | 1.80 |
tD(on) (ns) | 16 |
tD(off) (ns) | 28 |
Trr (ns) | 268 |
Qrr (nC) | 1600 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |