- Home
- MOSFETs
- 高压MOSFET (500V - 1000V)
- AONS660A70F
AONS660A70F
高压MOSFET (500V - 1000V)
700V, aMOS5™ N-Channel Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AONS660A70F Datasheet | Datasheets | 2020-04-14 | |
| AONS660A70F Marking | Markings | 2020-04-14 | |
| AONS660A70F Reliability Report | Reliability Reports | 2021-05-20 | |
| DFN5x6F_8L_EP1_P | Package | 2022-09-06 | |
| DFN5x6F_8L_EP1_P Tape & Reel | Tape & Reel | 2024-03-15 | |
| HV MOSFET Product Highlights | Product Highlights | 2024-02-02 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AONS660A70F Datasheet | Datasheets | 2020-04-14 | |
| AONS660A70F Marking | Markings | 2020-04-14 | |
| AONS660A70F Reliability Report | Reliability Reports | 2021-05-20 | |
| DFN5x6F_8L_EP1_P | Package | 2022-09-06 | |
| DFN5x6F_8L_EP1_P Tape & Reel | Tape & Reel | 2024-03-15 | |
| HV MOSFET Product Highlights | Product Highlights | 2024-02-02 |
Parametrics
Status | Full Production |
Package | DFN5x6-8L |
Configuration | Single |
Polarity | N |
VDS (V) | 700 |
VGS (±V) | 20 |
ID @ 25°C (A) | 9.60 |
PD @ 25°C (W) | 138 |
RDS(ON) max (mΩ) at VGS= 10V | 660 |
Qg (10V)(nC) | 14.50 |
Ciss (pF) | 900 |
Coss (pF) | 23 |
Crss (pF) | 1.40 |
Qgd (nC) | 2.60 |
tD(on) (ns) | 20 |
tD(off) (ns) | 33 |
Trr (ns) | 260 |
Qrr (nC) | 3500 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| DFN5x6F_8L_EP1_P | 5.0x6.0x0.95 | Tape and Reel |