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AONV110A60

AONV110A60

高压MOSFET (500V - 1000V)

600V, aMOS5™ N-Channel Power Transistor

  • Datasheets
  • Markings
  • Package
  • Reliability Reports
  • Tape & Reel
Download Selected
Documentation
TitleTypeDateFile
AONV110A60 DatasheetDatasheets2022-02-23PDF
AONV110A60 MarkingMarkings2022-02-23PDF
AONV110A60 Reliability ReportReliability Reports2022-02-23PDF
DFN8x8-4LPackage2022-09-06PDF
DFN8x8_4L_EP1_S Tape & ReelTape & Reel2021-01-20PDF
Documentation
TitleTypeDateFile
AONV110A60 DatasheetDatasheets2022-02-23PDF
AONV110A60 MarkingMarkings2022-02-23PDF
AONV110A60 Reliability ReportReliability Reports2022-02-23PDF
DFN8x8-4LPackage2022-09-06PDF
DFN8x8_4L_EP1_S Tape & ReelTape & Reel2021-01-20PDF
Parametrics
Status
Full Production
Package
DFN8x8-4L
Configuration
Single
Polarity
N
VDS (V)
600.00
VGS (±V)
20.00
ID @ 25°C (A)
35.00
PD @ 25°C (W)
357.00

RDS(ON) max (mΩ) at VGS= 10V

110.00
Qg (4.5V)(nC)
72.00
VGS(th) max (V)
3.60
Ciss (pF)
4140.00
Coss (pF)
105.00
Crss (pF)
0.50
Qgd (nC)
22.00
tD(on) (ns)
48.00
tD(off) (ns)
99.00
Trr (ns)
444.00
Qrr (nC)
11500.00
Qualification
Industrial
ESD Diode
No
Tj max (°C)
150.00
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
DFN8x8-4L 8.0x8.0PDFTape and Reel