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AONV110A60
高压MOSFET (500V - 1000V)
600V, aMOS5™ N-Channel Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AONV110A60 Datasheet | Datasheets | 2022-02-23 | |
| AONV110A60 Marking | Markings | 2022-02-23 | |
| AONV110A60 Reliability Report | Reliability Reports | 2022-02-23 | |
| DFN8x8_4L_EP1_S | Package | 2022-09-06 | |
| DFN8x8_4L_EP1_S Tape & Reel | Tape & Reel | 2021-01-20 | |
| HV MOSFET Product Highlights | Product Highlights | 2023-05-25 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AONV110A60 Datasheet | Datasheets | 2022-02-23 | |
| AONV110A60 Marking | Markings | 2022-02-23 | |
| AONV110A60 Reliability Report | Reliability Reports | 2022-02-23 | |
| DFN8x8_4L_EP1_S | Package | 2022-09-06 | |
| DFN8x8_4L_EP1_S Tape & Reel | Tape & Reel | 2021-01-20 | |
| HV MOSFET Product Highlights | Product Highlights | 2023-05-25 |
Parametrics
Status | Full Production |
Package | DFN8x8-4L |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 20 |
ID @ 25°C (A) | 35 |
PD @ 25°C (W) | 357 |
RDS(ON) max (mΩ) at VGS= 10V | 110 |
Qg (10V)(nC) | 72 |
VGS(th) max (V) | 3.60 |
Ciss (pF) | 4140 |
Coss (pF) | 105 |
Crss (pF) | 0.50 |
Qgd (nC) | 22 |
tD(on) (ns) | 48 |
tD(off) (ns) | 99 |
Trr (ns) | 444 |
Qrr (nC) | 11500 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| DFN8x8_4L_EP1_S | 8.0x8.0 | Tape and Reel |