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AOTL42A60E
高压MOSFET (500V - 1000V)
600V, aMOS™ N-Channel Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOTL42A60E Datasheet | Datasheets | 2021-06-23 | |
| AOTL42A60E Marking | Markings | 2022-03-11 | |
| AOTL42A60E Reliability Report | Reliability Reports | 2021-06-23 | |
| TOLL | Package | 2022-09-06 | |
| TOLL Tape & Reel | Tape & Reel | 2020-11-05 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOTL42A60E Datasheet | Datasheets | 2021-06-23 | |
| AOTL42A60E Marking | Markings | 2022-03-11 | |
| AOTL42A60E Reliability Report | Reliability Reports | 2021-06-23 | |
| TOLL | Package | 2022-09-06 | |
| TOLL Tape & Reel | Tape & Reel | 2020-11-05 |
Parametrics
Status | Full Production |
Package | TOLL |
Configuration | Single |
Polarity | N |
VDS (V) | 600.00 |
VGS (±V) | 30.00 |
ID @ 25°C (A) | 30.00 |
PD @ 25°C (W) | 367.00 |
RDS(ON) max (mΩ) at VGS= 10V | 109.00 |
Qg (4.5V)(nC) | 58.00 |
VGS(th) max (V) | 4.60 |
Ciss (pF) | 3850.00 |
Coss (pF) | 105.00 |
Crss (pF) | 0.90 |
Qgd (nC) | 12.00 |
tD(on) (ns) | 85.00 |
tD(off) (ns) | 110.00 |
Trr (ns) | 458.00 |
Qrr (nC) | 10000.00 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150.00 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| TOLL | 9.8x11.68x2.3 | Tape and Reel |