AOU4S60
高压MOSFET (500V - 1000V)
600V 4A αMOS™ Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOU4S60 Datasheet | Datasheets | 2019-02-12 | |
| AOU4S60 Marking | Markings | 2019-02-12 | |
| AOU4S60 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO251 | Package | 2020-02-27 | |
| TO251 Tape & Reel | Tape & Reel | 2024-01-11 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOU4S60 Datasheet | Datasheets | 2019-02-12 | |
| AOU4S60 Marking | Markings | 2019-02-12 | |
| AOU4S60 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO251 | Package | 2020-02-27 | |
| TO251 Tape & Reel | Tape & Reel | 2024-01-11 |
Parametrics
Status | Last Time Buy |
Package | TO251 |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 30 |
ID @ 25°C (A) | 4 |
PD @ 25°C (W) | 56.80 |
RDS(ON) max (mΩ) at VGS= 10V | 900 |
Qg (10V)(nC) | 6 |
VGS(th) max (V) | 4.10 |
Ciss (pF) | 263 |
Coss (pF) | 21 |
Crss (pF) | 0.75 |
Qgd (nC) | 1.80 |
tD(on) (ns) | 18 |
tD(off) (ns) | 40 |
Trr (ns) | 177 |
Qrr (nC) | 1500 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |