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AOW190A60C
高压MOSFET (500V - 1000V)
600V, aMOS5™ N-Channel Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOW190A60C Datasheet | Datasheets | 2021-01-20 | |
| AOW190A60C Marking | Markings | 2019-07-01 | |
| AOW190A60C Reliability Report | Reliability Reports | 2019-07-01 | |
| TO-262 | Package | 2020-08-11 | |
| TO262 Tape & Reel | Tape & Reel | 2020-08-11 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOW190A60C Datasheet | Datasheets | 2021-01-20 | |
| AOW190A60C Marking | Markings | 2019-07-01 | |
| AOW190A60C Reliability Report | Reliability Reports | 2019-07-01 | |
| TO-262 | Package | 2020-08-11 | |
| TO262 Tape & Reel | Tape & Reel | 2020-08-11 |
Parametrics
Status | Full Production |
Package | TO262 |
Configuration | Single |
Polarity | N |
VDS (V) | 600.00 |
VGS (±V) | 20.00 |
ID @ 25°C (A) | 20.00 |
PD @ 25°C (W) | 208.00 |
RDS(ON) max (mΩ) at VGS= 10V | 190.00 |
Qg (4.5V)(nC) | 34.00 |
VGS(th) max (V) | 4.00 |
Ciss (pF) | 1935.00 |
Coss (pF) | 55.00 |
Crss (pF) | 1.25 |
Qgd (nC) | 8.00 |
tD(on) (ns) | 80.00 |
tD(off) (ns) | 80.00 |
Trr (ns) | 341.00 |
Qrr (nC) | 6800.00 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150.00 |