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AOW190A60C

AOW190A60C

高压MOSFET (500V - 1000V)

600V, aMOS5™ N-Channel Power Transistor

  • Datasheets
  • Markings
  • Package
  • Reliability Reports
  • Tape & Reel
Download Selected
Documentation
TitleTypeDateFile
AOW190A60C DatasheetDatasheets2021-01-20PDF
AOW190A60C MarkingMarkings2019-07-01PDF
AOW190A60C Reliability ReportReliability Reports2019-07-01PDF
TO-262Package2020-08-11PDF
TO262 Tape & ReelTape & Reel2020-08-11PDF
Documentation
TitleTypeDateFile
AOW190A60C DatasheetDatasheets2021-01-20PDF
AOW190A60C MarkingMarkings2019-07-01PDF
AOW190A60C Reliability ReportReliability Reports2019-07-01PDF
TO-262Package2020-08-11PDF
TO262 Tape & ReelTape & Reel2020-08-11PDF
Parametrics
Status
Full Production
Package
TO262
Configuration
Single
Polarity
N
VDS (V)
600.00
VGS (±V)
20.00
ID @ 25°C (A)
20.00
PD @ 25°C (W)
208.00

RDS(ON) max (mΩ) at VGS= 10V

190.00
Qg (4.5V)(nC)
34.00
VGS(th) max (V)
4.00
Ciss (pF)
1935.00
Coss (pF)
55.00
Crss (pF)
1.25
Qgd (nC)
8.00
tD(on) (ns)
80.00
tD(off) (ns)
80.00
Trr (ns)
341.00
Qrr (nC)
6800.00
Qualification
Industrial
ESD Diode
No
Tj max (°C)
150.00
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
TO262 10.15x22.45x4.57PDFTube