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AOWF125A60
高压MOSFET (500V - 1000V)
600V, aMOS5™ N-Channel Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOWF125A60 Datasheet | Datasheets | 2019-11-01 | |
| AOWF125A60 Marking | Markings | 2019-11-01 | |
| AOWF125A60 Reliability Report | Reliability Reports | 2019-11-01 | |
| TO262F | Package | 2020-08-11 | |
| TO262F Tape & Reel | Tape & Reel | 2023-07-17 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOWF125A60 Datasheet | Datasheets | 2019-11-01 | |
| AOWF125A60 Marking | Markings | 2019-11-01 | |
| AOWF125A60 Reliability Report | Reliability Reports | 2019-11-01 | |
| TO262F | Package | 2020-08-11 | |
| TO262F Tape & Reel | Tape & Reel | 2023-07-17 |
Parametrics
Status | Full Production |
Package | TO262F |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 20 |
ID @ 25°C (A) | 28 |
PD @ 25°C (W) | 32.50 |
RDS(ON) max (mΩ) at VGS= 10V | 125 |
Qg (10V)(nC) | 39 |
VGS(th) max (V) | 4.50 |
Ciss (pF) | 2993 |
Coss (pF) | 85 |
Crss (pF) | 0.80 |
Qgd (nC) | 9 |
tD(on) (ns) | 39 |
tD(off) (ns) | 56 |
Trr (ns) | 375 |
Qrr (nC) | 8000 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |