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AOWF160A60
高压MOSFET (500V - 1000V)
600V, aMOS5™ N-Channel Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOWF160A60 Datasheet | Datasheets | 2022-07-12 | |
| AOWF160A60 Marking | Markings | 2019-06-28 | |
| AOWF160A60 Reliability Report | Reliability Reports | 2019-06-28 | |
| TO-262F | Package | 2020-08-11 | |
| TO262F Tape & Reel | Tape & Reel | 2020-08-11 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOWF160A60 Datasheet | Datasheets | 2022-07-12 | |
| AOWF160A60 Marking | Markings | 2019-06-28 | |
| AOWF160A60 Reliability Report | Reliability Reports | 2019-06-28 | |
| TO-262F | Package | 2020-08-11 | |
| TO262F Tape & Reel | Tape & Reel | 2020-08-11 |
Parametrics
Status | Full Production |
Package | TO262F |
Configuration | Single |
Polarity | N |
VDS (V) | 600.00 |
VGS (±V) | 20.00 |
ID @ 25°C (A) | 24.00 |
PD @ 25°C (W) | 20.00 |
RDS(ON) max (mΩ) at VGS= 10V | 160.00 |
Qg (4.5V)(nC) | 46.00 |
VGS(th) max (V) | 3.00 |
Ciss (pF) | 2340.00 |
Coss (pF) | 62.00 |
Crss (pF) | 1.30 |
Qgd (nC) | 14.00 |
tD(on) (ns) | 34.00 |
tD(off) (ns) | 63.00 |
Trr (ns) | 387.00 |
Qrr (nC) | 7300.00 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150.00 |