AOWF4N60
高压MOSFET (500V - 1000V)
600V,4A N-Channel MOSFET
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOWF4N60 Datasheet | Datasheets | 2019-02-12 | |
| AOWF4N60 Marking | Markings | 2019-02-12 | |
| AOWF4N60 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO-262F | Package | 2020-08-11 | |
| TO262F Tape & Reel | Tape & Reel | 2020-08-11 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOWF4N60 Datasheet | Datasheets | 2019-02-12 | |
| AOWF4N60 Marking | Markings | 2019-02-12 | |
| AOWF4N60 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO-262F | Package | 2020-08-11 | |
| TO262F Tape & Reel | Tape & Reel | 2020-08-11 |
Parametrics
Status | Last Time Buy |
Package | TO262F |
Configuration | Single |
Polarity | N |
VDS (V) | 600.00 |
VGS (±V) | 30.00 |
ID @ 25°C (A) | 4.00 |
PD @ 25°C (W) | 25.00 |
RDS(ON) max (mΩ) at VGS= 10V | 2300.00 |
Qg (10V)(nC) | 12.00 |
VGS(th) max (V) | 4.50 |
Ciss (pF) | 528.00 |
Coss (pF) | 53.00 |
Crss (pF) | 4.80 |
Qgd (nC) | 4.40 |
tD(on) (ns) | 17.00 |
tD(off) (ns) | 34.00 |
Trr (ns) | 190.00 |
Qrr (nC) | 2400.00 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150.00 |