AOWF8N50
高压MOSFET (500V - 1000V)
500V, 8A N-Channel MOSFET
- Datasheets
- Markings
- Package
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOWF8N50 Datasheet | Datasheets | 2019-02-12 | |
| AOWF8N50 Marking | Markings | 2019-02-12 | |
| TO262F | Package | 2020-08-11 | |
| TO262F Tape & Reel | Tape & Reel | 2023-07-17 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOWF8N50 Datasheet | Datasheets | 2019-02-12 | |
| AOWF8N50 Marking | Markings | 2019-02-12 | |
| TO262F | Package | 2020-08-11 | |
| TO262F Tape & Reel | Tape & Reel | 2023-07-17 |
Parametrics
Status | Last Time Buy |
Package | TO262F |
Configuration | Single |
Polarity | N |
VDS (V) | 500 |
VGS (±V) | 30 |
ID @ 25°C (A) | 8 |
PD @ 25°C (W) | 27.80 |
RDS(ON) max (mΩ) at VGS= 10V | 850 |
Qg (10V)(nC) | 23.60 |
VGS(th) max (V) | 4.50 |
Ciss (pF) | 868 |
Coss (pF) | 93 |
Crss (pF) | 7.80 |
Qgd (nC) | 10.60 |
tD(on) (ns) | 19.50 |
tD(off) (ns) | 51.50 |
Trr (ns) | 206 |
Qrr (nC) | 2100 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |