AO4812
低压MOSFET (12V - 30V)
30V Dual N-Channel MOSFET
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO4812 Datasheet | Datasheets | 2024-04-17 | |
| AO4812 Marking | Markings | 2019-02-12 | |
| AO4812 Reliability Report | Reliability Reports | 2019-02-12 | |
| SO8 | Package | 2020-08-04 | |
| SO8 Tape & Reel | Tape & Reel | 2020-08-04 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO4812 Datasheet | Datasheets | 2024-04-17 | |
| AO4812 Marking | Markings | 2019-02-12 | |
| AO4812 Reliability Report | Reliability Reports | 2019-02-12 | |
| SO8 | Package | 2020-08-04 | |
| SO8 Tape & Reel | Tape & Reel | 2020-08-04 |
Parametrics
Status | Full Production |
Package | SO8 |
Configuration | Dual |
Polarity | N |
VDS (V) | 30 |
RDS(ON) max (mΩ) at VGS= 10V | 30 |
RDS(ON) max (mΩ) at VGS= 4.5V | 42 |
VGS (±V) | 20 |
ID @ 25°C (A) | 6 |
PD @ 25°C (W) | 2 |
Qg (4.5V)(nC) | 2.55 |
Qg (10V)(nC) | 5.20 |
VGS(th) max (V) | 2.40 |
Ciss (pF) | 255 |
Coss (pF) | 45 |
Crss (pF) | 35 |
Qgd (nC) | 1.30 |
tD(on) (ns) | 4.50 |
tD(off) (ns) | 14.50 |
Trr (ns) | 8.50 |
Qrr (nC) | 2.20 |
ESD Diode | No |
Tj max (°C) | 150 |
Qualification | Industrial |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| SO8 | 4.9x3.9x1.65 | Tape and Reel |