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AONY36356
低压MOSFET (12V - 30V)
30V Dual Asymmetric N-Channel MOSFET
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AONY36356 Datasheet | Datasheets | 2019-12-17 | |
| AONY36356 Marking | Markings | 2019-03-20 | |
| AONY36356 Reliability Report | Reliability Reports | 2019-03-20 | |
| DFN5x6B-8L_EP2_P | Package | 2022-09-06 | |
| DFN5x6B_8L_EP2_P Tape & Reel | Tape & Reel | 2020-04-01 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AONY36356 Datasheet | Datasheets | 2019-12-17 | |
| AONY36356 Marking | Markings | 2019-03-20 | |
| AONY36356 Reliability Report | Reliability Reports | 2019-03-20 | |
| DFN5x6B-8L_EP2_P | Package | 2022-09-06 | |
| DFN5x6B_8L_EP2_P Tape & Reel | Tape & Reel | 2020-04-01 |
Parametrics
Status | Full Production |
Package | DFN5x6-8L |
Configuration | Half-Bridge |
Polarity | N |
VDS (V) | 30 |
RDS(ON) max (mΩ) at VGS= 10V | 6.10 |
RDS(ON) max (mΩ) at VGS= 4.5V | 9.60 |
VGS (±V) | 20 |
ID @ 25°C (A) | 32 |
PD @ 25°C (W) | 22 |
Qg (4.5V)(nC) | 6 |
Qg (10V)(nC) | 13 |
VGS(th) max (V) | 2.10 |
Ciss (pF) | 920 |
Coss (pF) | 300 |
Crss (pF) | 35 |
Qgd (nC) | 2 |
Trr (ns) | 11 |
Qrr (nC) | 21 |
ESD Diode | No |
Tj max (°C) | 150 |
Qualification | Industrial |
Status | Full Production |
Package | DFN5x6-8L |
Configuration | Half-Bridge |
Polarity | N |
VDS (V) | 30 |
RDS(ON) max (mΩ) at VGS= 10V | 3.80 |
RDS(ON) max (mΩ) at VGS= 4.5V | 4.70 |
VGS (±V) | 12 |
ID @ 25°C (A) | 32 |
PD @ 25°C (W) | 33 |
Qg (4.5V)(nC) | 13.50 |
Qg (10V)(nC) | 30 |
VGS(th) max (V) | 1.90 |
Ciss (pF) | 2005 |
Coss (pF) | 430 |
Crss (pF) | 50 |
Qgd (nC) | 3.50 |
Trr (ns) | 12 |
Qrr (nC) | 21 |
ESD Diode | No |
Tj max (°C) | 150 |
Qualification | Industrial |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| DFN5x6B_8L_EP2_P | 5.0x6.0x0.9 | Tape and Reel |