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AOCR35101E

低压共漏电池 MOSFET

Status: Full Production

12V Common-Drain Dual N-Channel MOSFET

Parametrics
Status
Full Production
Package
MRigidCSP3.2x1.95-10L
Configuration
Common Drain
Polarity
N
Vss (V)
12
VGS (±V)
8
IS @ 25°C (A)
45
PD @ 25°C (W)
2.80
Qg (4.5V)(nC)
50
VGS(th) max (V)
1.20
tD(on) (ns)
4.50
tD(off) (ns)
3.50
Qualification
Industrial
ESD Diode
Yes
Tj max (°C)
150
Parametrics
Status
Full Production
Package
MRigidCSP3.2x1.95-10L
Configuration
Common Drain
Polarity
N
Vss (V)
12
VGS (±V)
8
IS @ 25°C (A)
45
PD @ 25°C (W)
2.80
Qg (4.5V)(nC)
50
VGS(th) max (V)
1.20
tD(on) (ns)
4.50
tD(off) (ns)
3.50
Qualification
Industrial
ESD Diode
Yes
Tj max (°C)
150
Documentation
TitleTypeDateFile
AOCR35101E Datasheet
Datasheets2024-02-23PDF
AOCR35101E Marking
Markings2024-02-23PDF
AOCR35101E Reliability Report
Reliability Reports2024-03-04PDF
MRigidCSP3.2x1.95-10
Package2024-02-23PDF
MRigidCSP3.2x1.95-10 Tape & Reel
Tape & Reel2024-02-23PDF
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
MRigidCSP3.2x1.95-10 3.20x1.95x0.300PDFTape and Reel