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AOCR36330
低压共漏电池 MOSFET
30V Common-Drain Dual N-Channel MOSFET
- Datasheets
- Markings
- Reliability Reports
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOCR36330 Datasheet | Datasheets | 2020-07-22 | |
| AOCR36330 Marking | Markings | 2020-07-22 | |
| AOCR36330 Reliability Report | Reliability Reports | 2021-05-20 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOCR36330 Datasheet | Datasheets | 2020-07-22 | |
| AOCR36330 Marking | Markings | 2020-07-22 | |
| AOCR36330 Reliability Report | Reliability Reports | 2021-05-20 |
Parametrics
Status | Last Time Buy |
Configuration | Common Drain |
Polarity | N |
Vss (V) | 30 |
VGS (±V) | 20 |
IS @ 25°C (A) | 40 |
PD @ 25°C (W) | 3.50 |
Qg (4.5V)(nC) | 128 |
VGS(th) max (V) | 2 |
RSS(ON) max (mΩ) at VGS= 10V | 1.40 |
RSS(ON) max (mΩ) at VGS= 4.5V | 2.80 |
tD(on) (ns) | 13.50 |
tD(off) (ns) | 80 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |