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AON5802B
低压共漏电池 MOSFET
Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于锂电池的保护。这些“共漏”MOSFET具有低Rdson，可快速充电及延长电池寿命。 同时， Alpha and Omega Semiconductor拥有先进的CPS技术，拥有该技术的RigidCSP™系列产品，可以减少其在焊接过程中的翘曲，提高了产品在应用中的可靠性。
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AON5802B Datasheet | Datasheets | 2019-02-12 | |
| AON5802B Marking | Markings | 2019-02-12 | |
| AON5802B Reliability Report | Reliability Reports | 2019-02-12 | |
| DFN2x5_6L_EP1_P | Package | 2022-11-16 | |
| DFN2x5_6L_EP1_P Tape & Reel | Tape & Reel | 2024-03-14 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AON5802B Datasheet | Datasheets | 2019-02-12 | |
| AON5802B Marking | Markings | 2019-02-12 | |
| AON5802B Reliability Report | Reliability Reports | 2019-02-12 | |
| DFN2x5_6L_EP1_P | Package | 2022-11-16 | |
| DFN2x5_6L_EP1_P Tape & Reel | Tape & Reel | 2024-03-14 |
Parametrics
Status | Obsolete |
Replacement Parts | AON5802BG |
Package | DFN2x5-6L |
Configuration | Common Drain |
Polarity | N |
VGS (±V) | 12 |
PD @ 25°C (W) | 1.60 |
Qg (4.5V)(nC) | 7.50 |
VGS(th) max (V) | 1.50 |
Ciss (pF) | 920 |
Coss (pF) | 105 |
Crss (pF) | 52 |
Qgd (nC) | 2.50 |
tD(on) (ns) | 320 |
tD(off) (ns) | 4350 |
Trr (ns) | 21.60 |
Qrr (nC) | 10 |
Qualification | Industrial |
ESD Diode | Yes |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| DFN2x5_6L_EP1_P | 2.0x5.0x0.75 | Tape and Reel |