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AON5816

低压共漏电池 MOSFET

Status: Full Production

20V Common-Drain Dual N-Channel MOSFET

Parametrics
Status
Full Production
Package
DFN2x5-6L
Configuration
Common Drain
Polarity
N
VGS (±V)
12
PD @ 25°C (W)
1.70
Qg (4.5V)(nC)
22
VGS(th) max (V)
1.30
Ciss (pF)
2170
Coss (pF)
330
Crss (pF)
270
Qgd (nC)
6
Trr (ns)
23
Qrr (nC)
45
Qualification
Industrial
ESD Diode
Yes
Tj max (°C)
150
Parametrics
Status
Full Production
Package
DFN2x5-6L
Configuration
Common Drain
Polarity
N
VGS (±V)
12
PD @ 25°C (W)
1.70
Qg (4.5V)(nC)
22
VGS(th) max (V)
1.30
Ciss (pF)
2170
Coss (pF)
330
Crss (pF)
270
Qgd (nC)
6
Trr (ns)
23
Qrr (nC)
45
Qualification
Industrial
ESD Diode
Yes
Tj max (°C)
150
Documentation
TitleTypeDateFile
AON5816 Datasheet
Datasheets2016-12-02PDF
AON5816 Marking
Markings2016-12-02PDF
AON5816 Reliability Report
Reliability Reports2021-05-20PDF
DFN2x5A_6L_EP1_P
Package2022-11-16PDF
DFN2x5A_6L_EP1_P Tape & Reel
Tape & Reel2024-03-14PDF
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
DFN2x5A_6L_EP1_P 2.0x5.0x0.75PDFTape and Reel