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AON6812
低压共漏电池 MOSFET
AlphaMOS 30V Common Drain N-Channel
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AON6812 Datasheet | Datasheets | 2016-01-29 | |
| AON6812 Marking | Markings | 2019-02-12 | |
| AON6812 Reliability Report | Reliability Reports | 2021-05-20 | |
| DFN5x6B_8L_EP1_P | Package | 2022-09-06 | |
| DFN5x6B_8L_EP1_P Tape & Reel | Tape & Reel | 2024-03-15 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AON6812 Datasheet | Datasheets | 2016-01-29 | |
| AON6812 Marking | Markings | 2019-02-12 | |
| AON6812 Reliability Report | Reliability Reports | 2021-05-20 | |
| DFN5x6B_8L_EP1_P | Package | 2022-09-06 | |
| DFN5x6B_8L_EP1_P Tape & Reel | Tape & Reel | 2024-03-15 |
Parametrics
Status | Obsolete |
Package | DFN5x6-8L |
Configuration | Common Drain |
Polarity | N |
VGS (±V) | 20 |
PD @ 25°C (W) | 31 |
Qg (4.5V)(nC) | 11 |
VGS(th) max (V) | 2.20 |
Ciss (pF) | 1720 |
Coss (pF) | 746 |
Crss (pF) | 61 |
Qgd (nC) | 3.20 |
tD(on) (ns) | 5.80 |
tD(off) (ns) | 57.50 |
Trr (ns) | 20 |
Qrr (nC) | 30 |
Qualification | Industrial |
ESD Diode | Yes |
Tj max (°C) | 150 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| DFN5x6B_8L_EP1_P | 5.0x6.0x0.95 | Tape and Reel |