AO4840E
中压MOSFET (40V - 400V)
40V Dual N-Channel AlphaMOS
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO4840E Datasheet | Datasheets | 2019-02-12 | |
| AO4840E Marking | Markings | 2019-02-12 | |
| AO4840E Reliability Report | Reliability Reports | 2021-05-20 | |
| SO-8 | Package | 2020-08-04 | |
| SO8 Tape & Reel | Tape & Reel | 2020-08-04 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AO4840E Datasheet | Datasheets | 2019-02-12 | |
| AO4840E Marking | Markings | 2019-02-12 | |
| AO4840E Reliability Report | Reliability Reports | 2021-05-20 | |
| SO-8 | Package | 2020-08-04 | |
| SO8 Tape & Reel | Tape & Reel | 2020-08-04 |
Parametrics
Status | Full Production |
Package | SO8 |
Configuration | Dual |
Polarity | N |
VDS (V) | 40.00 |
VGS (±V) | 20.00 |
ID @ 25°C (A) | 6.00 |
PD @ 25°C (W) | 2.00 |
RDS(ON) max (mΩ) at VGS= 10V | 28.00 |
RDS(ON) max (mΩ) at VGS= 4.5V | 35.00 |
Qg (4.5V)(nC) | 4.50 |
VGS(th) max (V) | 2.60 |
Ciss (pF) | 520.00 |
Coss (pF) | 65.00 |
Crss (pF) | 32.00 |
Qgd (nC) | 1.50 |
tD(on) (ns) | 6.40 |
tD(off) (ns) | 16.20 |
Trr (ns) | 8.00 |
Qrr (nC) | 13.00 |
Qualification | Industrial |
ESD Diode | Yes |
Tj max (°C) | 150.00 |
Package Details
| Package Name | Dimensions | Package Specifications | Packaging Method |
|---|---|---|---|
| SO8 | 4.9x3.9x1.65 | Tape and Reel |