AOI4185
P沟道MOSFET (8V - 60V)
Status: Full Production
P-Channel Enhancement Mode Field Effect Transistor
Parametrics
Status | Full Production |
Package | TO251A |
Configuration | Single |
Polarity | P |
VDS (V) | -40 |
VGS (±V) | 20 |
RDS(ON) max (mΩ) at VGS= 10V | 15 |
RDS(ON) max (mΩ) at VGS= 4.5V | 20 |
ID @ 25°C (A) | -40 |
PD @ 25°C (W) | 62.50 |
Qg (4.5V)(nC) | 18.60 |
Qg (10V)(nC) | 42 |
VGS(th) max (V) | -3 |
Ciss (pF) | 2550 |
Coss (pF) | 280 |
Crss (pF) | 190 |
Qgd (nC) | 8.60 |
tD(on) (ns) | 9.40 |
tD(off) (ns) | 55 |
Trr (ns) | 38 |
Qrr (nC) | 47 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 175 |
Parametrics
Status | Full Production |
Package | TO251A |
Configuration | Single |
Polarity | P |
VDS (V) | -40 |
VGS (±V) | 20 |
RDS(ON) max (mΩ) at VGS= 10V | 15 |
RDS(ON) max (mΩ) at VGS= 4.5V | 20 |
ID @ 25°C (A) | -40 |
PD @ 25°C (W) | 62.50 |
Qg (4.5V)(nC) | 18.60 |
Qg (10V)(nC) | 42 |
VGS(th) max (V) | -3 |
Ciss (pF) | 2550 |
Coss (pF) | 280 |
Crss (pF) | 190 |
Qgd (nC) | 8.60 |
tD(on) (ns) | 9.40 |
tD(off) (ns) | 55 |
Trr (ns) | 38 |
Qrr (nC) | 47 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 175 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOI4185 Datasheet | Datasheets | 2024-06-11 | |
| AOI4185 Marking | Markings | 2019-02-12 | |
| AOI4185 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO251A | Package | 2020-07-29 | |
| TO251A Tape & Reel | Tape & Reel | 2023-07-17 |