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AON2411

P沟道MOSFET (8V - 60V)

Status: Obsolete

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺技术用于生产P 沟道功率 MOSFET,其具有卓越的鲁棒性,是负载切换、电池保护和电机驱动的理想选择。

Parametrics
Status
Obsolete
Package
DFN2x2-8L
Configuration
Single
Polarity
P
VDS (V)
-12
VGS (±V)
8

RDS(ON) max (mΩ) at VGS= 4.5V

8

RDS(ON) max (mΩ) at VGS= 2.5V

11.60

RDS(ON) max (mΩ) at VGS= 1.8V

17.50
ID @ 25°C (A)
-20
PD @ 25°C (W)
5
Qg (4.5V)(nC)
20
VGS(th) max (V)
-0.90
Ciss (pF)
2180
Coss (pF)
675
Crss (pF)
425
Qgd (nC)
5.50
tD(on) (ns)
15
tD(off) (ns)
135
Trr (ns)
28
Qrr (nC)
13
Qualification
Industrial
ESD Diode
Yes
Tj max (°C)
150
Parametrics
Status
Obsolete
Package
DFN2x2-8L
Configuration
Single
Polarity
P
VDS (V)
-12
VGS (±V)
8

RDS(ON) max (mΩ) at VGS= 4.5V

8

RDS(ON) max (mΩ) at VGS= 2.5V

11.60

RDS(ON) max (mΩ) at VGS= 1.8V

17.50
ID @ 25°C (A)
-20
PD @ 25°C (W)
5
Qg (4.5V)(nC)
20
VGS(th) max (V)
-0.90
Ciss (pF)
2180
Coss (pF)
675
Crss (pF)
425
Qgd (nC)
5.50
tD(on) (ns)
15
tD(off) (ns)
135
Trr (ns)
28
Qrr (nC)
13
Qualification
Industrial
ESD Diode
Yes
Tj max (°C)
150
Documentation
TitleTypeDateFile
AON2411 Datasheet
Datasheets2019-02-12PDF
AON2411 Marking
Markings2019-02-12PDF
DFN2x2C_8L_EP1_S
Package2022-10-20PDF
DFN2x2C_8L_EP1_S Tape & Reel
Tape & Reel2024-03-14PDF
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
DFN2x2C_8_EP1_S 2.0x2.0x0.75PDFTape and Reel