AOU4N60
高压MOSFET (500V - 1000V)
600V,4A N-Channel MOSFET
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOU4N60 Datasheet | Datasheets | 2019-02-12 | |
| AOU4N60 Marking | Markings | 2019-02-12 | |
| AOU4N60 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO251 | Package | 2020-02-27 | |
| TO251 Tape & Reel | Tape & Reel | 2024-01-11 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOU4N60 Datasheet | Datasheets | 2019-02-12 | |
| AOU4N60 Marking | Markings | 2019-02-12 | |
| AOU4N60 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO251 | Package | 2020-02-27 | |
| TO251 Tape & Reel | Tape & Reel | 2024-01-11 |
Parametrics
Status | Not for New Designs |
Package | TO251 |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 30 |
ID @ 25°C (A) | 4 |
PD @ 25°C (W) | 104 |
RDS(ON) max (mΩ) at VGS= 10V | 2300 |
Qg (10V)(nC) | 12 |
VGS(th) max (V) | 4.50 |
Ciss (pF) | 528 |
Coss (pF) | 53 |
Crss (pF) | 4.80 |
Qgd (nC) | 4.40 |
tD(on) (ns) | 17 |
tD(off) (ns) | 34 |
Trr (ns) | 190 |
Qrr (nC) | 2400 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |