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AOU4N60

AOU4N60

高压MOSFET (500V - 1000V)

600V,4A N-Channel MOSFET

  • Datasheets
  • Markings
  • Package
  • Reliability Reports
  • Tape & Reel
Download Selected
Documentation
TitleTypeDateFile
AOU4N60 DatasheetDatasheets2019-02-12PDF
AOU4N60 MarkingMarkings2019-02-12PDF
AOU4N60 Reliability ReportReliability Reports2021-05-20PDF
TO251Package2020-02-27PDF
TO251 Tape & ReelTape & Reel2023-10-06PDF
Documentation
TitleTypeDateFile
AOU4N60 DatasheetDatasheets2019-02-12PDF
AOU4N60 MarkingMarkings2019-02-12PDF
AOU4N60 Reliability ReportReliability Reports2021-05-20PDF
TO251Package2020-02-27PDF
TO251 Tape & ReelTape & Reel2023-10-06PDF
Parametrics
Status
Not for New Designs
Package
TO251
Configuration
Single
Polarity
N
VDS (V)
600
VGS (±V)
30
ID @ 25°C (A)
4
PD @ 25°C (W)
104

RDS(ON) max (mΩ) at VGS= 10V

2300
Qg (10V)(nC)
12
VGS(th) max (V)
4.50
Ciss (pF)
528
Coss (pF)
53
Crss (pF)
4.80
Qgd (nC)
4.40
tD(on) (ns)
17
tD(off) (ns)
34
Trr (ns)
190
Qrr (nC)
2400
Qualification
Industrial
ESD Diode
No
Tj max (°C)
150
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
TO251 6.5x14.75x2.3PDFTube