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AOI1R4A70

High Voltage MOSFETs (500V - 1000V)

Status: Full Production

700V, aMOS™ N-Channel Power Transistor

Parametrics
Status
Full Production
Package
TO251A
Configuration
Single
Polarity
N
VDS (V)
700
VGS (±V)
20
ID @ 25°C (A)
3.80
PD @ 25°C (W)
48

RDS(ON) max (mΩ) at VGS= 10V

1400
Qg (10V)(nC)
8
VGS(th) max (V)
4.10
Ciss (pF)
354
Coss (pF)
12
Crss (pF)
1.30
Qgd (nC)
2
tD(on) (ns)
15
tD(off) (ns)
32
Trr (ns)
176
Qrr (nC)
1400
Qualification
Industrial
ESD Diode
No
Tj max (°C)
150
Parametrics
Status
Full Production
Package
TO251A
Configuration
Single
Polarity
N
VDS (V)
700
VGS (±V)
20
ID @ 25°C (A)
3.80
PD @ 25°C (W)
48

RDS(ON) max (mΩ) at VGS= 10V

1400
Qg (10V)(nC)
8
VGS(th) max (V)
4.10
Ciss (pF)
354
Coss (pF)
12
Crss (pF)
1.30
Qgd (nC)
2
tD(on) (ns)
15
tD(off) (ns)
32
Trr (ns)
176
Qrr (nC)
1400
Qualification
Industrial
ESD Diode
No
Tj max (°C)
150
Documentation
TitleTypeDateFile
AOI1R4A70 Datasheet
Datasheets2020-07-31PDF
AOI1R4A70 Marking
Markings2018-08-01PDF
AOI1R4A70 Reliability Report
Reliability Reports2021-05-20PDF
TO251A
Package2020-07-29PDF
TO251A Tape & Reel
Tape & Reel2023-07-17PDF
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
TO251A 6.6x11.42x2.29PDFTube