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AOI4S60
High Voltage MOSFETs (500V - 1000V)
600V 4A αMOS™ Power Transistor
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOI4S60 Datasheet | Datasheets | 2019-02-12 | |
| AOI4S60 Marking | Markings | 2019-02-12 | |
| AOI4S60 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO-251A | Package | 2020-07-29 | |
| TO251A Tape & Reel | Tape & Reel | 2020-07-29 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOI4S60 Datasheet | Datasheets | 2019-02-12 | |
| AOI4S60 Marking | Markings | 2019-02-12 | |
| AOI4S60 Reliability Report | Reliability Reports | 2021-05-20 | |
| TO-251A | Package | 2020-07-29 | |
| TO251A Tape & Reel | Tape & Reel | 2020-07-29 |
Parametrics
Status | Last Time Buy |
Package | TO251A |
Configuration | Single |
Polarity | N |
VDS (V) | 600.00 |
VGS (±V) | 30.00 |
ID @ 25°C (A) | 4.00 |
PD @ 25°C (W) | 56.80 |
RDS(ON) max (mΩ) at VGS= 10V | 900.00 |
Qg (10V)(nC) | 6.00 |
VGS(th) max (V) | 4.10 |
Ciss (pF) | 263.00 |
Coss (pF) | 21.00 |
Crss (pF) | 0.75 |
Qgd (nC) | 1.80 |
tD(on) (ns) | 18.00 |
tD(off) (ns) | 40.00 |
Trr (ns) | 177.00 |
Qrr (nC) | 1500.00 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150.00 |