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AOT3N100
High Voltage MOSFETs (500V - 1000V)
1000V,2.8A N-Channel MOSFET
- Datasheets
- Markings
- Package
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOT3N100 Datasheet | Datasheets | 2019-02-12 | |
| AOT3N100 Marking | Markings | 2019-02-12 | |
| TO-220 | Package | 2020-08-11 | |
| TO220 Tape & Reel | Tape & Reel | 2020-08-11 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOT3N100 Datasheet | Datasheets | 2019-02-12 | |
| AOT3N100 Marking | Markings | 2019-02-12 | |
| TO-220 | Package | 2020-08-11 | |
| TO220 Tape & Reel | Tape & Reel | 2020-08-11 |
Parametrics
Status | Not for New Designs |
Package | TO220 |
Configuration | Single |
Polarity | N |
VDS (V) | 1000.00 |
VGS (±V) | 30.00 |
ID @ 25°C (A) | 2.80 |
PD @ 25°C (W) | 132.00 |
RDS(ON) max (mΩ) at VGS= 10V | 6000.00 |
Qg (4.5V)(nC) | 15.00 |
VGS(th) max (V) | 4.50 |
Ciss (pF) | 690.00 |
Coss (pF) | 44.00 |
Crss (pF) | 5.00 |
Qgd (nC) | 4.70 |
tD(on) (ns) | 22.00 |
tD(off) (ns) | 40.00 |
Trr (ns) | 400.00 |
Qrr (nC) | 3700.00 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150.00 |