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AOU2N60
High Voltage MOSFETs (500V - 1000V)
600V, 2A N-Channel MOSFET
- Datasheets
- Markings
- Package
- Reliability Reports
- Tape & Reel
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOU2N60 Datasheet | Datasheets | 2016-03-10 | |
| AOU2N60 Marking | Markings | 2019-02-12 | |
| AOU2N60 Reliability Report | Reliability Reports | 2019-02-12 | |
| TO-251 | Package | 2020-02-27 | |
| TO251 Tape & Reel | Tape & Reel | 2020-02-27 |
Documentation
| Title | Type | Date | File |
|---|---|---|---|
| AOU2N60 Datasheet | Datasheets | 2016-03-10 | |
| AOU2N60 Marking | Markings | 2019-02-12 | |
| AOU2N60 Reliability Report | Reliability Reports | 2019-02-12 | |
| TO-251 | Package | 2020-02-27 | |
| TO251 Tape & Reel | Tape & Reel | 2020-02-27 |
Parametrics
Status | Not for New Designs |
Package | TO251 |
Configuration | Single |
Polarity | N |
VDS (V) | 600 |
VGS (±V) | 30 |
ID @ 25°C (A) | 2 |
PD @ 25°C (W) | 56.80 |
RDS(ON) max (mΩ) at VGS= 10V | 4400 |
Qg (10V)(nC) | 9.50 |
VGS(th) max (V) | 5 |
Ciss (pF) | 270 |
Coss (pF) | 29 |
Crss (pF) | 2.80 |
Qgd (nC) | 4.70 |
tD(on) (ns) | 17.20 |
tD(off) (ns) | 27 |
Trr (ns) | 154 |
Qrr (nC) | 800 |
Qualification | Industrial |
ESD Diode | No |
Tj max (°C) | 150 |