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AONE36132

AONE36132

Low Voltage MOSFETs (12V - 30V)

25V Dual Asymmetric N-Channel MOSFET

  • Datasheets
  • Markings
  • Package
  • Reliability Reports
  • Tape & Reel
Download Selected
Documentation
TitleTypeDateFile
AONE36132 DatasheetDatasheets2017-11-09PDF
AONE36132 MarkingMarkings2017-11-09PDF
AONE36132 Reliability ReportReliability Reports2021-05-20PDF
DC-DC XSPairFET Product HighlightsProduct Highlights2024-02-14PDF
DFN3.3x3.3A_8L_EP2_SPackage2022-09-06PDF
DFN3.3x3.3A_8L_EP2_S Tape & ReelTape & Reel2024-01-30PDF
Documentation
TitleTypeDateFile
AONE36132 DatasheetDatasheets2017-11-09PDF
AONE36132 MarkingMarkings2017-11-09PDF
AONE36132 Reliability ReportReliability Reports2021-05-20PDF
DC-DC XSPairFET Product HighlightsProduct Highlights2024-02-14PDF
DFN3.3x3.3A_8L_EP2_SPackage2022-09-06PDF
DFN3.3x3.3A_8L_EP2_S Tape & ReelTape & Reel2024-01-30PDF
Parametrics
Status
Full Production
Package
DFN3.3x3.3-8L
Configuration
Half-Bridge
Polarity
N
VDS (V)
25

RDS(ON) max (mΩ) at VGS= 10V

4.60

RDS(ON) max (mΩ) at VGS= 4.5V

6
VGS (±V)
12
ID @ 25°C (A)
60
PD @ 25°C (W)
25
Qg (4.5V)(nC)
6.50
Qg (10V)(nC)
14.50
VGS(th) max (V)
1.80
Ciss (pF)
880
Coss (pF)
250
Crss (pF)
55
Qgd (nC)
2.50
Trr (ns)
9
Qrr (nC)
11.50
ESD Diode
No
Tj max (°C)
150
Qualification
Industrial
Status
Full Production
Package
DFN3.3x3.3-8L
Configuration
Half-Bridge
Polarity
N
VDS (V)
25

RDS(ON) max (mΩ) at VGS= 10V

1.40

RDS(ON) max (mΩ) at VGS= 4.5V

1.70
VGS (±V)
12
ID @ 25°C (A)
60
PD @ 25°C (W)
35.50
Qg (4.5V)(nC)
25
Qg (10V)(nC)
55
VGS(th) max (V)
1.80
Ciss (pF)
3215
Coss (pF)
860
Crss (pF)
200
Qgd (nC)
5
Trr (ns)
16
Qrr (nC)
33.50
ESD Diode
No
Tj max (°C)
150
Qualification
Industrial
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
DFN3.3x3.3A_8L_EP2_S 3.3x3.3x0.75PDFTape and Reel