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AONH36334

AONH36334

Low Voltage MOSFETs (12V - 30V)

30V Dual Asymmetric N-Channel MOSFET

  • Datasheets
  • Markings
  • Package
  • Reliability Reports
  • Tape & Reel
Download Selected
Documentation
TitleTypeDateFile
AONH36334 DatasheetDatasheets2021-04-12PDF
AONH36334 MarkingMarkings2021-04-12PDF
AONH36334 Reliability ReportReliability Reports2021-04-12PDF
DFN3x3A_8L_EP2_SPackage2022-09-07PDF
DFN3x3A_8L_EP2_S Tape & ReelTape & Reel2020-02-27PDF
Documentation
TitleTypeDateFile
AONH36334 DatasheetDatasheets2021-04-12PDF
AONH36334 MarkingMarkings2021-04-12PDF
AONH36334 Reliability ReportReliability Reports2021-04-12PDF
DFN3x3A_8L_EP2_SPackage2022-09-07PDF
DFN3x3A_8L_EP2_S Tape & ReelTape & Reel2020-02-27PDF
Parametrics
Status
Full Production
Package
DFN3x3-8L
Configuration
Half-Bridge
Polarity
N
VDS (V)
30

RDS(ON) max (mΩ) at VGS= 10V

10.20

RDS(ON) max (mΩ) at VGS= 4.5V

15.80
VGS (±V)
20
ID @ 25°C (A)
16
PD @ 25°C (W)
23
Qg (4.5V)(nC)
3.90
Qg (10V)(nC)
8
VGS(th) max (V)
2.20
Ciss (pF)
485
Coss (pF)
235
Crss (pF)
32
Qgd (nC)
2.10
tD(on) (ns)
3.50
tD(off) (ns)
16.30
Trr (ns)
9.90
Qrr (nC)
12.90
ESD Diode
No
Tj max (°C)
150
Qualification
Industrial
Status
Full Production
Package
DFN3x3-8L
Configuration
Half-Bridge
Polarity
N
VDS (V)
30

RDS(ON) max (mΩ) at VGS= 10V

7.70

RDS(ON) max (mΩ) at VGS= 4.5V

15.80
VGS (±V)
20
ID @ 25°C (A)
18
PD @ 25°C (W)
25
Qg (4.5V)(nC)
3.90
Qg (10V)(nC)
12.90
VGS(th) max (V)
2.20
Ciss (pF)
485
Coss (pF)
235
Crss (pF)
32
Qgd (nC)
2.10
tD(on) (ns)
3.50
tD(off) (ns)
16.30
Trr (ns)
9.90
Qrr (nC)
12.90
ESD Diode
No
Tj max (°C)
150
Qualification
Industrial
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
DFN3x3A_8L_EP2_S 3.0x3.0x0.75PDFTape and Reel