AOSMD
English简体中文
CONTACT US

PRODUCTS

All Gallium Nitride (GaN) Transistors
FEATURED
AOS_800VDC-Powers-AI-Factories PR Image
SiC and GaN, Power MOSFET, and Power IC Solutions

Alpha and Omega Semiconductor Supports 800 VDC Power Architecture for Next-Generation AI Factories with Innovative SiC and GaN, Power MOSFET, and Power IC Solutions

APPLICATIONS

Automotive
EV Powertrain
Cloud
ServerTelecom Infrastructure
Computing
Graphic CardsNotebook
Consumer
Home Appliance
Industrial
Power Supply
Motor Drive
Power Tool

DESIGN SUPPORT

PackagingResource LibraryApplication NotesQuality & Reliability
Design & Simulation Tools
Power EsimEZBuck Design Tool (xls)EZBuck COT Design Tool (xls)

ABOUT

Company OverviewCareersNewsroom
Quality & Reliability
wafer
Corporate Responsibility
green building

Search

Part Number
Keyword
Parametric
AOSMD
English简体中文
PRODUCTS
  
APPLICATIONS
  
DESIGN SUPPORT
  
INVESTORS
  
ABOUT
  
CONTACT US

AONP38324

Low Voltage MOSFETs (12V - 30V)

Status: Full Production

30V Dual Asymmetric N-Channel MOSFET

Parametrics
Status
Full Production
Package
DFN3.3x3.3C-8L
Configuration
Dual
Polarity
N
VDS (V)
30

RDS(ON) max (mΩ) at VGS=10V

2.40

RDS(ON) max (mΩ) at VGS=4.5V

2.90
VGS (±V)
12
ID @ 25°C (A)
134
PD @ 25°C (W)
69
Qg (4.5V)(nC)
12
Qg (10V)(nC)
27
VGS(th) min (V)
1
VGS(th) typ (V)
1.40
VGS(th) max (V)
1.80
Ciss (pF)
1940
Coss (pF)
520
Crss (pF)
45
Qgd (nC)
2.10
tD(on) (ns)
6
tD(off) (ns)
30
Trr (ns)
15
Qrr (nC)
32
ESD Diode
No
Tj max (°C)
150
Qualification
Industrial
Status
Full Production
Package
DFN3.3x3.3C-8L
Configuration
Dual
Polarity
N
VDS (V)
30

RDS(ON) max (mΩ) at VGS=10V

2.30

RDS(ON) max (mΩ) at VGS=4.5V

2.90
VGS (±V)
12
ID @ 25°C (A)
110
PD @ 25°C (W)
46
Qg (4.5V)(nC)
12
Qg (10V)(nC)
26
VGS(th) min (V)
1.10
VGS(th) typ (V)
1.50
VGS(th) max (V)
1.90
Ciss (pF)
1890
Coss (pF)
490
Crss (pF)
50
Qgd (nC)
2.20
tD(on) (ns)
5
tD(off) (ns)
27
Trr (ns)
14
Qrr (nC)
31
ESD Diode
No
Tj max (°C)
150
Qualification
Industrial
Parametrics
Status
Full Production
Package
DFN3.3x3.3C-8L
Configuration
Dual
Polarity
N
VDS (V)
30

RDS(ON) max (mΩ) at VGS=10V

2.40

RDS(ON) max (mΩ) at VGS=4.5V

2.90
VGS (±V)
12
ID @ 25°C (A)
134
PD @ 25°C (W)
69
Qg (4.5V)(nC)
12
Qg (10V)(nC)
27
VGS(th) min (V)
1
VGS(th) typ (V)
1.40
VGS(th) max (V)
1.80
Ciss (pF)
1940
Coss (pF)
520
Crss (pF)
45
Qgd (nC)
2.10
tD(on) (ns)
6
tD(off) (ns)
30
Trr (ns)
15
Qrr (nC)
32
ESD Diode
No
Tj max (°C)
150
Qualification
Industrial
Status
Full Production
Package
DFN3.3x3.3C-8L
Configuration
Dual
Polarity
N
VDS (V)
30

RDS(ON) max (mΩ) at VGS=10V

2.30

RDS(ON) max (mΩ) at VGS=4.5V

2.90
VGS (±V)
12
ID @ 25°C (A)
110
PD @ 25°C (W)
46
Qg (4.5V)(nC)
12
Qg (10V)(nC)
26
VGS(th) min (V)
1.10
VGS(th) typ (V)
1.50
VGS(th) max (V)
1.90
Ciss (pF)
1890
Coss (pF)
490
Crss (pF)
50
Qgd (nC)
2.20
tD(on) (ns)
5
tD(off) (ns)
27
Trr (ns)
14
Qrr (nC)
31
ESD Diode
No
Tj max (°C)
150
Qualification
Industrial
Documentation
TitleTypeDateFile
AONP38324 Datasheet		Datasheets2024-07-11PDF
AONP38324 Marking		Markings2022-06-15PDF
AONP38324 Reliability Report		Reliability Reports2022-07-27PDF
DFN3.3x3.3C_8L_EP2_S		Package2022-09-06PDF
DFN3.3x3.3C_8L_EP2_S Tape & Reel		Tape & Reel2025-03-05PDF
Download Selected
Related Resources
TitleTypeDateFile
DC-DC XSPairFET Product HighlightsProduct Highlights2025-04-14PDF
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
DFN3.3x3.3C_8L_EP2_S 3.3x3.3x0.75PDFTape and Reel
Terms of UseTerms and Conditions of SalePrivacy

©2025 Alpha and Omega Semiconductor. All Rights Reserved.