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AOI4185

AOI4185

P-Channel MOSFETs (8V - 60V)

P-Channel Enhancement Mode Field Effect Transistor

  • Datasheets
  • Markings
  • Package
  • Reliability Reports
  • Tape & Reel
Download Selected
Documentation
TitleTypeDateFile
AOI4185 DatasheetDatasheets2019-02-12PDF
AOI4185 MarkingMarkings2019-02-12PDF
AOI4185 Reliability ReportReliability Reports2021-05-20PDF
TO-251APackage2020-07-29PDF
TO251A Tape & ReelTape & Reel2020-07-29PDF
Documentation
TitleTypeDateFile
AOI4185 DatasheetDatasheets2019-02-12PDF
AOI4185 MarkingMarkings2019-02-12PDF
AOI4185 Reliability ReportReliability Reports2021-05-20PDF
TO-251APackage2020-07-29PDF
TO251A Tape & ReelTape & Reel2020-07-29PDF
Parametrics
Status
Full Production
Package
TO251A
Configuration
Single
Polarity
P
VDS (V)
-40.00
VGS (±V)
20.00
ID @ 25°C (A)
-40.00
PD @ 25°C (W)
62.50

RDS(ON) max (mΩ) at VGS= 10V

15.00

RDS(ON) max (mΩ) at VGS= 4.5V

20.00
Qg (4.5V)(nC)
18.60
VGS(th) max (V)
-3.00
Ciss (pF)
2550.00
Coss (pF)
280.00
Crss (pF)
190.00
Qgd (nC)
8.60
tD(on) (ns)
9.40
tD(off) (ns)
55.00
Trr (ns)
38.00
Qrr (nC)
47.00
Qualification
Industrial
ESD Diode
No
Tj max (°C)
175.00
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
TO251A 6.6x11.42x2.29PDFTube