The AOZ5516QI-03 is a high efficiency synchronous buck power stage module consisting of two asymmetrical MOSFETs and an integrated driver. The MOSFETs are individually optimized for operation in the synchronous buck configuration. The High-Side MOSFET is optimized to achieve low capacitance and gate charge for fast switching with low duty cycle operation. The Low-Side MOSFET has ultra low ON resistance to minimize conduction loss. The compact 5mm x 5mm QFN package is optimally chosen and designed to minimize parasitic inductance for minimal EMI signature.
Status | Full Production |
Power Stage Type | DrMOS |
Package | QFN5x5A-31L |
Min Vin (V) | 4.50 |
Max Vin (V) | 18 |
Abs Max Vin (V) | 30 |
Max DC I (A) | 55 |
Max Peak I (A) | 120 |
PWM Input (V) | 5 |
Tri-State Range (V) | 1.6 - 3.4 |
Max Frequency (MHz) | 2 |
Shutdown Control | FCCM = TS, PWM = TS |
Enable Diode Emulation Mode | FCCM = L |
Thermal Flag | No |
OCP (A) | No |
HSD | No |
Pre-OVP | No |
Status | Full Production |
Power Stage Type | DrMOS |
Package | QFN5x5A-31L |
Min Vin (V) | 4.50 |
Max Vin (V) | 18 |
Abs Max Vin (V) | 30 |
Max DC I (A) | 55 |
Max Peak I (A) | 120 |
PWM Input (V) | 5 |
Tri-State Range (V) | 1.6 - 3.4 |
Max Frequency (MHz) | 2 |
Shutdown Control | FCCM = TS, PWM = TS |
Enable Diode Emulation Mode | FCCM = L |
Thermal Flag | No |
OCP (A) | No |
HSD | No |
Pre-OVP | No |
Title | Type | Date | File |
---|---|---|---|
AOZ5516QI-03 Datasheet | Datasheets | 2024-04-03 | |
AOZ5516QI-03 Marking | Markings | 2024-04-03 | |
AOZ5516QI-03 Reliability Report | Reliability Reports | 2024-04-03 | |
QFN5x5A_31L_EP3_S | Package | 2020-08-04 | |
QFN5x5A_31L_EP3_S Tape & Reel | Tape & Reel | 2022-10-06 |
Package Name | Dimensions | Package Specifications | Packaging Method |
---|---|---|---|
QFN5x5A_31L_EP3_S | 5.0x5.0x0.75 | Tape and Reel |