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AOK20120XSD

Silicon Carbide (SiC) Diodes

Status: Full Production

αSiC 1200V Schottky diodes provide a low forward drop and zero reverse recovery performance for high switching frequency and power-dense designs. Replacing Si diodes can dramatically reduce losses and increase system efficiency.

Parametrics
Status
Full Production
Package
TO247
Configuration
Dual
Qualification
Industrial
Tj max (°C)
175
IF (A)
20
VDC (V)
1200
VF (V)
1.45
QC (nC)
136
Parametrics
Status
Full Production
Package
TO247
Configuration
Dual
Qualification
Industrial
Tj max (°C)
175
IF (A)
20
VDC (V)
1200
VF (V)
1.45
QC (nC)
136
Documentation
TitleTypeDateFile
AOK20120XSD Datasheet
Datasheets2021-12-24PDF
AOK20120XSD Marking
Markings2021-12-24PDF
TO247
Package2024-09-14PDF
TO247 Tube
Tube2023-10-06PDF
Package Details
Package NameDimensionsPackage SpecificationsPackaging Method
TO247 21.00x15.80x5.00PDFTube